Epistar Corporation, located in Hsinchu Science Park, Taiwan since September 1996, focuses on developing, manufacturing and marketing high brightness Light Emitting Diode (LED) products. Applying its own proprietary Metal Organic Vapor Phase Epitaxy (MOVPE) technology, Epistar has sucessfully commercialized the full spectrum range of high brightness LEDs.
2016
Outstanding Photonics Product Award : GaN Driver IC
 
2015
Signed Patent cross-license agreement with CREE
Outstanding Photonics Product Award : Flexible LED Lighting System.
Merged with TSMCSSL.
 
2014
Acquired FOREPI.
Outstanding Photonics Product Award : LED Planar Light Source by Lens-less Design.
Signed Patent cross-license agreementwith PHILIPS.
IR 850nm WPE over 75%
 
2013
Outstanding Photonics Products Award : Self-heat Dissipated LED Filament Crystal Bulb.
 
2012
247 lm/W warm white HV LED by EPISTAR lab.
Acquired HUGA
 
2011
216 lm/W warm white HV LED by EPISTAR lab.
 
2010
Established JV with TOYODA GOSEI
Outstanding Photonics Products Award : Warm White LED.
Partner with Nan Ya Photonics, Teckore, Huga..
 
2009
Industrial Excellence Award : EPISTAR Corporation.
HV LED product launch.
AC LED product launch.
Outstanding Contribution in Science and Technology : Chairman B.J. Lee.
 
2008
High power nitride LED product launch.
 
2007
Excellence Award for Innovative Corporation : EPISTAR Corporation.
Merger with Epitech.
 
2006
Outstanding Photonics Products : High Power Green LED.
 
2005
Merger with UEC
Outstanding Photonics Products : High Power UV LED.
 
2004
1W 4-element LED product launch.
 
2003
Outstanding Photonics Products : ITO Based InGaN LED.
 
2002
Innovative Product Award : High Intensity InGaN LED.
 
2001
Distinction Award in Technology Development : EPISTAR Corporation.
IPO listing on the Taiwan Stock Exchange.
 
2000
Nitride LED product launch.
 
1997
4-element LED product launch.
 
1996
Established in Hsinchu Science-Based Industrial Park in Taiwan.